Gallium Nitride(GaN)
Gallium Nitride(GaN)
Gallium Nitride (GaN) is a wide-bandgap semiconductor with a bandgap energy of 3.4 eV, much higher than silicon (Si) at 1.1 eV. This enables GaN-based devices to operate at higher voltages, temperatures, and efficiencies, making them essential for optoelectronic applications like LEDs and high-power electronics.
Unlike Si, GaN cannot be grown using conventional melt-based crystal growth techniques like the Czochralski (CZ) method due to its high decomposition temperature. Instead, Hydride Vapor Phase Epitaxy (HVPE) is used to grow high-quality GaN films on sapphire substrates. Our lab focuses on optimizing HVPE growth conditions to improve GaN material properties for Micro-LEDs and advanced semiconductor applications.
Thru-Hole Epitaxty(THE)Â
Thru-hole epitaxy (THE) shares similarities with epitaxial lateral overgrowth (ELO), where nucleation begins on small-exposed regions of the substrate, followed by lateral growth over a two-dimensional (2D) material mask layer. However, a key distinction of THE lies in its facile detachability. By leveraging a thermal release tape, the deposited film can be easily separated from the substrate, thanks to the controlled configuration of thru-holes formed within one or multiple layers of 2D materials. This unique feature sets THE apart from conventional ELO methodologies, offering a more efficient approach to film detachment.
Micro-LED
Micro-LEDs are an emerging display technology offering superior brightness, energy efficiency, and long lifespan. Gallium Nitride (GaN) is a key material for Micro-LED fabrication due to its excellent optoelectronic properties, including high luminous efficiency and thermal stability. However, the challenge of efficient mass transfer and integration remains a critical area of research. In our lab, we focus on the epitaxial growth of high-quality GaN films, with an interest in optimizing material properties for Micro-LED applications in display and lighting technologies.
Quantum Emitter
hBN-based quantum emitters stand out as one of the most promising candidates for next-generation quantum technologies. Their ability to operate at room temperature, combined with high photon emission efficiency and environmental stability, makes them an exciting frontier in quantum optics, secure communication, and quantum information processing. As research in this field continues to advance, hBN is poised to play a crucial role in the future of quantum technology.
In our lab, we use a CVD system to grow hBN in a high-temperature environment, and we aim to grow high-quality hBN thin films with controllable thickness.