[79]“A new critical growth parameter of H2/CH4 gas flow ratio and mechanistic model for SiC nanowire synthesis via Si substrate carbonization”, Junghyun Koo and Chinkyo Kim, Scientific Reports 14, 29629 (2024.11.)

[78]“Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy”, Youngjun Lee, Seungjun Lee, Jaewu Choi, Chinkyo Kim, Young-Kyun Kwon, Advanced Engineering Materials 26, 2301654 (2024.02.)

[77]“Thru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth”, Dongsoo Jang, Chulwoo Ahn, Youngjun Lee, Seungjun Lee, Hyunkyu Lee, Donghoi Kim, Yongsun Kim, Ji-Yong Park, Young-Kyun Kwon, Jaewu Choi, and Chinkyo Kim, Advanced Materials Interfaces 10, 2201406 (2023.02.)

[76]“Transferable thru-hole epitaxy of GaN and ZnO, respectively, over graphene and MoS2 as a 2D space layer”, Hyunkyu Lee, Minjoo Kim, Dongsoo Jang, Suhee Jang, Won Il Park, and Chinkyo Kim, Crystal Growth & Design 22, 6995 (2022.12.)

[75]“Diffusion-enhanced preferential growth of 𝑚-oriented GaN micro-domains on directly grown graphene with a large domain size on Ti/SiO2/Si(001)”, Hyunkyu Lee, Jong-Hyurk Park, Nikhilesh Maity, Donghoi Kim, Dongsoo Jang, Chinkyo Kim, Young-Gui Yoon, Abhishek K. Singh, Yire Han, and Soon-Gil Yoon, Materials Today Communications 30, 103113 (2022.03.)

[74]“A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO2‑Patterned Sapphire Substrate”, Donghoi Kim, Dongsoo Jang, Hyunkyu Lee, Jayeong Kim, Yujin Jang, Seokhyun Yoon, and Chinkyo Kim, Cryst. Growth & Des. 20, 6198 (2020.09.)

[73]“Two-dimensional non-close-packed arrays of polystyrene microspheres prepared by controlling the size of polystyrene microspheres”, Donghoi Kim, Dongsoo Jang, Hyunkyu Lee, Jeewoo Lim, and Chinkyo Kim, Polymer 185, 121938 (2019.12.)

[72] “Non-edge-triggered inversion from Ga-polarity to N-polarity of c-GaN domains on an SiO2 mask during epitaxial lateral overgrowth”, Hyunkyu Lee, Dongsoo Jang, Donghoi Kim,and Chinkyo Kim, J. Appl. Crystallography 52, 532 (2019.06.)

[71] “Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga- to N-polarity at a mask pattern boundary”, Hwa Seob Kim, Hyunkyu Lee, Dongsoo Jang, Donghoi Kim, and Chinkyo Kim, J. Appl. Crystallography 51, 1551 (2018.12.).

[70] “Polarity and threading dislocation dependence of surface morphology of c-GaN films exposed to HCl vapor”, Hyunkyu Lee, Dongsoo Jang, Donghoi Kim, Hwa Seob Kim, and Chinkyo Kim, J. Mater. Chem. C 6, 6264 (2018.06.).

[69] “Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN”, Dongsoo Jang, Miyeon Jue, Donghoi Kim, Hwa Seob Kim, Hyunkyu Lee, and Chinkyo Kim, Scientific Reports 8, 4112 (2018.03.).

[68] “Faceted growth of (-1103)-oriented GaN domains on an SiO2-patterned m-plane sapphire substrate using polarity inversion”, Hansub Yoon, Miyeon Jue, Dongsoo Jang, and Chinkyo Kim, J. Appl. Crystallography 50, 30 (2017.02.).

[67] “Catalytic decomposition of SiO2 by Fe and the effect of Cu on the behavior of released Si species”, Dongsoo Jang, Miyeon Jue, Hansub Yoon, and Chinkyo Kim, Current Applied Physics 16, 93 (2016.01.).

[66] “The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates”, Miyeon Jue, Cheol-Woon Kim, Seoung-Hun Kang, Hansub Yoon, Dongsoo Jang, Young-Kyun Kwon, and Chinkyo Kim, Scientific Reports 5, 16236 (2015.11.).

[65] “Spontaneous pattern transfer and selective growth of graphene on a Cu foil”, Sanghwa Lee, Miyeon Jue, and Chinkyo Kim, Carbon 82, 238 (2015.02.).

[64] “Mechanism of preferential nucleation of [1-10-3]-oriented GaN twins on an SiO2-patterned m-plane sapphire substrate”, Hansub Yoon, Miyeon Jue, Hyemi Lee, Sanghwa Lee, and Chinkyo Kim, J. Appl. Cryst. 48, 195 (2015.02.).

[63] “Self-regulated in-plane polarity of [1-100]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m-plane sapphire substrate”, Hyemi Lee, Miyeon Jue, Hansub Yoon, Sanghwa Lee, and Chinkyo Kim, Appl. Phys. Lett. 104, 182105 (2014.05.).

[62] “A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins:[1-10-3]-oriented GaN films grown on m-plane sapphire substrates”, Miyeon Jue, Hansub Yoon, Hyemi Lee, Sanghwa Lee, and Chinkyo Kim, Appl. Phys. Lett. 104, 092110 (2014.03.).

[61] “Microscopic analysis of thermally-driven formation of Cu-Si alloy nanoparticles in a Cu/Si template”, Wooyoung Lee, Miyeon Jue, Sanghwa Lee, and Chinkyo Kim, J. Kor. Phys. Soc. 63, 2128 (2013.12.).

[60] “Spontaneous inversion of in-plane polarity of a-oriented GaN domains laterally overgrown on patterned r-plane sapphire substrates”, Donggyu Shin, Sanghwa Lee, Miyeon Jue, Wooyoung Lee, Soyoung Oh, and Chinkyo Kim, J. Appl. Crystallography 46, 443 (2013.04.).

[59] “Nitridation- and buffer-layer-free growth of [1-100]-oriented GaN domains on m-plane sapphire substrates by using hydride vapor phase epitaxy”, Yeonwoo Seo, Sanghwa Lee, Miyeon Jue, Hansub Yoon, and Chinkyo Kim, Appl. Phys. Exp. 5, 121001 (2012.12.).

[58] “X-ray diffuse scattering study of vacancy nanoclusters in homoepitaxial Ag(001) films”, Chinkyo Kim, Edward Conrad, and Paul Miceli, Phys. Rev. B 86, 155446 (2012.10.).

[57]“Regularly branched InN nanostructures:zinc-blende nanocore and polytypic transition”, Inhee Jung, Sanghwa Lee, Donggyu Shin, Hyunkyu Park, Mi Yeon Ju, and Chinkyo Kim, J. Appl. Crystallography 45, 503 (2012.06.).

[56] “Amplified spontaneous emission of GaN nanorods”, Hyeong Seop Shim, Joo Hee Seo, Noh Soo Han, Seung Min Park, Yuri Sohn, Chinkyo Kim, and Jae Kyu Song, Bull. Korean Chem. Soc. 33, 1075 (2012.03.).

[55] “Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating”, Hyunkyu Park and Chinkyo Kim, Optics Letters 37, 611 (2012.02.).

[54] “Analysis of morphological evolution of crystalline domains in nonequilibrium shape by using minimization of effective surface energy”, Yeonwoo Seo, Sanghwa Lee, Mi Yeon Ju, Donggyu Shin, Hyunkyu Park, and Chinkyo Kim, Cryst. Growth & Design 11, 3930 (2011.09.).

[53] “Nonequilibrium behavior of the Pb wetting layer on Si(111)7x7”, M. W. Gramlich, S. T. Hayden, Yiyao Chen, C. Kim, E. H. Conrad, M. C. Tringides, and P. F. Miceli, Phys. Rev. B 84, 075433 (2011.08.).

[52] “1.54 μm emission mechanism in Er-doped zinc oxide thin films”, Y. R. Jang, K. H. Yoo, J. S. Ahn, C. Kim, and S. M. Park, Appl. Surf. Sci. 257, 2822 (2011.01.).

[51] “Transformation of In grains to InN nanoshells with In2O3 as an intermediate state under N2-NH3 ambient”, Inhee Jung and Chinkyo Kim, J. Kor. Phys. Soc. 58, 49 (2011.01.).

[50] “Use of polytypes to control crystallographic orientation of GaN”, Hyun-Jae Lee, Takafumi Yao, Chinkyo Kim, and Jiho Chang, Crystal Growth & Design 10, 5307 (2010.12.).

[49] “Nanostructural analysis of GaN tripods and hexapods grown on c-plane sapphire”, Sanghwa Lee, Yuri Sohn, Chinkyo Kim, Dong Ryeol Lee, and Hyun-Hwi Lee, J. Appl. Crystallography 43, 1300 (2010.12.).

[48] “Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates”, Yeonwoo Seo and Chinkyo Kim, Appl. Phys. Lett. 97, 101902 (2010.09.).

[47] “Flow-modulation-assisted diffusion enhancement effect on the surface morphology of GaN films”, Sanghwa Lee and Chinkyo Kim, J. Kor. Phys. Soc. 57, 282 (2010.08.).

[46] “Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy”, Sanghwa Lee, Taegeon Oh, Boa Shin, Chinkyo Kim, Dong Ryeol Lee, and Hyun-Hwi Lee, J. Cryst. Growth 312, 2038 (2010.07.).

[45] “Interface between quantum-size-effect Pb nanocrystals and the Si(111)7x7 substrate: an X-ray diffraction study”, M. W. Gramlich, S. T. Hayden, C. A. Jeffrey, C. Kim, R. Feng, E. H. Conrad, P. F. Miceli, Metallurgical and Materials Transactions A 41, 1159 (2010.05.).

[44] “Novel approach to the fabrication of a strain- and crack-free GaN freestanding templates: Self-separation assisted by the voids spontaneously formed during the transition in the preferred orientation”, Hyun-Jae Lee, T. Goto, K. Fujii, T. Yao, Chinkyo Kim, and Jiho Chang, J. Cryst. Growth 312, 198 (2010.01.).

[43] “Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy”, Yuri Sohn and Chinkyo Kim, Appl. Surf. Sci. 256, 1078 (2009.11.).

[42] “1.54 μm emission mechanism in Er-doped silicon-rich silicon oxides”, Y. R. Jang, K. H. Yoo, J. S. Ahn, C. Kim, and S. M. Park, J. Appl. Phys. 106, 063521 (2009.09.).

[41] “Effect of refined nitridation of sapphire substrates in hydride vapor phase epitaxy: definite correlation of structural characteristics between a low-temperature-grown buffer layer and a subsequent high-temperature-grown layer of GaN”, Hyun-Jae Lee, Jun-Seok Ha, Hyo-Jong Lee, Seogwoo Lee, Chinkyo Kim, Soon-Ku Hong, Jiho Chang, Meoungwhan Cho, and T. Yao, J. Kor. Phys. Soc. 54, 2404 (2009.06.).

[40] “Microstructural analysis of void formation due to NH4Cl layer for self-separation of GaN thick films”, Hyun-Jae Lee, Jun-Seok Ha, Takafumi Yao, Chinkyo Kim, Soon-Ku Hong, Jiho Chang, Jae Wook Lee, and Jeong Yong Lee, Crystal Growth and Design 9, 2877 (2009.06.).

[39] “A crystallographic investigation of GaN nanostructures by reciprocal-space-mapping in a grazing incidence geometry”, Sanghwa Lee, Yuri Sohn, Chinkyo Kim, Dong Ryeol Lee, Hyun-Hwi Lee, Nanotechnology 20, 215703 (2009.05.).

[38] “Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxy”, Sanghwa Lee and Chinkyo Kim, J. Crystal Growth 311, 3025 (2009.05.).

[37] “Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxy”, Yuri Sohn and Chinkyo Kim, J. Crystal Growth 311, 2953 (2009.05.).

[36] “Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [11-20] to [0001]”, Hyun-Jae Lee, Jun-Seok Ha, T. Goto, T. Yao, Chinkyo Kim, Soon-Ku Hong, and Jiho Chang, Appl. Phys. Lett. 94, 102103 (2009.03.).

[35] “Migration-assisted formation of GaN nanodisks by hydride vapor phase epitaxy”, Sanghwa Lee and Chinkyo Kim, J. Kor. Phys. Soc. 53, 1646(2008.09.).

[34] “Branching characteristics of GaN multipods grown by using hydride vapor phase epitaxy”, Yuri Sohn and Chinkyo Kim, J. Kor. Phys. Soc. 53, 1393 (2008.09.).

[33] “Effect of the temperature gradient between a substrate and its ambient on the growth of vertically-aligned GaN nanorods”, Yuri Sohn, Sanghwa Lee, Hyeokmin Choe, and Chinkyo Kim, J. Kor. Phys. Soc. 53, 908 (2008.8.).

[32] “Long-range ordering of GaN nano-grains grown on vicinal sapphire substrates”, Hyeokmin Choe, Sanghwa Lee, Boa Shin, and Chinkyo Kim, J. Crystal Growth 310, 3278 (2008.7.).

[31] “Control of nucleation characteristics of GaN nanograins grown by hydride vapor phase epitaxy”, Boa Shin, Sanghwa Lee, Hyeokmin Choe, Taegeon Oh, Jai Weon Jean, Yuri Sohn, and Chinkyo Kim, J. Kor. Phys. Soc. 51, S212 (2007.12.).

[30] “Nano-clustering of vacancies in thin metal films revealed by x-ray diffuse scattering”, Chinkyo Kim, Rui Feng, Edward H. Conrad, and Paul F. Miceli, Appl. Phys. Lett. 91, 093131 (2007.8.).

[29] “Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers”, Sanghwa Lee, Hyeokmin Choe, Taegeon Oh, Jai Weon Jean, Boa Shin, Yuri Sohn, Chinkyo Kim, Jaewan Choi, Yong-Tae Moon, Joeng Soo Lee, Appl. Phys. Lett. 90, 151905 (2007.4.).

[28] “Effect of NH3 pretreatment on the surface morphologies of GaN films grown on miscut sapphire substrates by using hydride vapor phase epitaxy”, Sanghwa Lee, Taegeon Oh, Boa Shin, Jai Weon Jean, Hyeokmin Choe, and Chinkyo Kim, J. Kor. Phys. Soc. 50, 785 (2007.3.).

[27] “The growth of Pb nanocrystals on Si(111)7x7: Quantum size effects”, C. A. Jeffrey, R. Feng, E. H. Conrad, P. F. Miceli, C. Kim, M. Hupalo, M. C. Tringides, and P. J. Ryan, J. Superlattices and microstructures 41, 168 (2007.03.).

[26] “Formation and phtoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods”, Chinkyo Kim, Won Il Park, Gyu-Chul Yi, and Miyoung Kim, Appl. Phys. Lett. 89, 113106 (2006.9.).

[25] “Structural investigation of GaN nanograins nucleated on sapphire substrate”, Chinkyo Kim, Seogwoo Lee, Hyunjae Lee, and Meoungwhan Cho, J. Kor. Phys. Soc. 48, 1321 (2006.6.).

[24] “Influence of quantum size effects on island coarsening”, C. A. Jeffrey, E. H. Conrad, R. Feng, M. Hupalo, C. Kim, P. J. Ryan, P. F. Miceli, and M. C. Tringides, Phys. Rev. Lett. 96, 106105 (2006.3.).

[23] “Whispering-gallery-modelike-enhanced emission from ZnO nanodisk”, Chinkyo Kim, Yong-Jin Kim, Eue-Soon Jang, Gyu-Chul Yi, and Hyun Ha Kim, Appl. Phys. Lett. 88, 093104 (2006.2.).

[22] “The evolution of the structure of quantum size effect Pb nanocrystals on Si(111)7x7”, R. Feng, E. H. Conrad, C. Kim, P. F. Miceli and M. C. Tringides, Physica B:Condensed matter, 357, 175 (2005.2.).

[21] “Wetting-layer transformation for Pb nanocrystals grown on Si(111)”, R. Feng, E. H. Conrad, M. C. Tringides, C. Kim, and P. Miceli, Appl. Phys. Lett. 85, 3866 (2004.10.).

[20] “Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layer”, H. J. Lee, S. W. Lee, C. Kim, J. O. Seo, M. W. Cho, S. J. Leem, S. U. Hong, K. -H. Shim, J. Y. Kang, J. Kor. Phys. Soc. 42, S349 (2003.2.).

[19] “Heteroepitaxial growth of MgO thin films on Al2O3 (0001) by metalorganic chemical vapor deposition”, Won Il Park, Dong-Hyuk Kim, Gyu Chul Yi, Chinkyo Kim, Jpn. J. Appl. Phys. 41, No. 11B, 6919 (2002.11.).

[18] “Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films”, Chinkyo Kim, Sungwoo Kim, Yoonho Choi, and Shi-Jong Leem, J. Appl. Phys. 92, 6343 (2002.11.).

[17] “Zn-triggered critical behavior of formation of highly coherent domains in a Mg1-xZnxO thin film on Al2O3”, Chinkyo Kim, Shi-Jong Leem, Ian K. Robinson, W. I. Park, D. H. Kim, and G. ?C. Yi, Phys. Rev. B 66, 113404 (2002.9.).

[16] “Effect of rapid thermal annealing on GaN damages induced by electron cyclotron resonance reactive ion etching”, J. H. Yi, C. Kim, M. H. Kim, M. Yang, J. Jeon, S. Khym, M. Cho, S. Lee, Y. Choi and S.-J. Leem, J. Kor. Phys. Soc. 39, S364 (2001.12.).

[15] “Temperature-driven crystalline ordering and Ohmic contact formation of PdAu layer on p-type GaN”, Chinkyo Kim, Junho Jang, Johngeon Shin, Jae-Wan Choi, Jung-Hoon Seo, Wook Kim, Joongseo Park, Ju Ok Seo, Shi-Jong Leem, B. H. Seung, K. -B. Lee, and Y. J. Park, Phys. Rev. B 64. 113302 (2001.9.).

[14] “A selective growth of III-nitride by MOCVD for a buried-ridge type structure”, Min Yang, Meoungwhan Cho, Chinkyo Kim, Jaehyung Yi, Jina Jeon, Sungwon Khym, Minhong Kim, Yoonho Choi, Shi-Jong Leem, and Yong-Hee Lee, J. Crystal Growth, 226, 73 (2001.6.).

[13] “Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN(0001) by rf-magnetron sputter”, K. H. Shim, M. C. Paek, B. T. Lee, C. Kim, and J. Y. Kang, Applied Physics A, 72, 471 (2001.4.).

[12] “Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN film”, Chinkyo Kim, Jaehyung Yi, Min Yang, Minhong Kim, Jina Jeon, Sungwon Khym, Meoungwhan Cho, Yoonho Choi, Shi-Jong Leem, and Seon Tai Kim, Appl. Phys. Lett. 77, 4319 (2000.12.).

[11] “Cathodoluminescence characteristics of large-scale In-rich InGaN grains and effect of low-energy electron-beam irradiation”, Chinkyo Kim, Min Yang, Jaehyung Yi, Minhong Kim, Heesuk Song, Jina Jeon, Yoonho Choi, Tae-Kyung Yoo, and Shi-Jong Leem, J. Kor. Phys. Soc. 37, 846 (2000.11.).

[10] “Formation and characteristics of inversion domain in GaN grown by hydride vapor phase epitaxy”, Chinkyo Kim, Min Yang, Wonsang Lee, Jaehyung Yi, Sungwoo Kim, Yoonho Choi, Tae-Kyung Yoo, and Seon Tai Kim, J. Crystal Growth, 213, 235 (2000.6.).

[9] “Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy”, Chinkyo Kim, Jaehyung Yi, Sungwoo Kim, Min Hong Kim, Min Yang, Yoonho Choi, Tae-Kyung Yoo, and Seon Tai Kim, J. Crystal Growth, 208, 804 (2000.1.).

[8] “Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor deposition”, Chinkyo Kim, Sungwoo Kim, Jaehyung Yi, Yoonho Choi, Tae-Kyung Yoo, and Chang-Hee Hong, J. Kor. Phys. Soc. 34, S370 (1999.5.).

[7] “Buffer layer strain transfer in AlN/GaN near critical thickness”, Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyu-Hwan Shim, and Kyekyoon Kim, J. Appl. Phys. 85, 4040 (1999.4.).

[6] “Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation”, Chinkyo Kim, I. K. Robinson, T. Spila, and J. E. Greene, J. Appl. Phys. 83, 7608 (1998.6.).

[5] “Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy”, K. -H. Shim, J. M. Myoung, O. Gluschenkov, K. Kim, C. Kim and I. K. Robinson, Jpn. J. Appl. Phys. 37, L313 (1998.3.).

[4] “Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy”, J. M. Myoung, K. H. Shim, O. Gluschenkov, C. Kim, K. Kim, S. Kim and S. G. Bishop, J. Cryst. Growth. 182, 241 (1997.12.).

[3.]“Refined structure of Sb/Si(111)”, Chinkyo Kim, D. A. Walko and I. K. Robinson, Surf. Sci. 388, 242 (1997.10.).

[2] “Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy”, J. M. Myoung, K. H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D. A. Turnbull and S. G. Bishop, Appl. Phys. Lett. 69, 2722 (1996.10.).

[1] “Critical thickness of GaN thin films on sapphire(0001)”, Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyu-Hwan Shim, Myung-Cheol Yoo and Kyekyoon Kim, Appl. Phys. Lett. 69, 2358 (1996.10.).