72. ˇ°Non-edge-triggered inversion from Ga-polarity to N-polarity of c-GaN domains on an SiO2 mask during epitaxial lateral overgrowthˇ±, Hyunkyu Lee, Dongsoo Jang, Donghoi Kim,and Chinkyo Kim, J. Appl. Crystallography 52, 532 (2019.06.)

71. ˇ°Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga- to N-polarity at a mask pattern boundaryˇ±, Hwa Seob Kim, Hyunkyu Lee, Dongsoo Jang, Donghoi Kim, and Chinkyo Kim, J. Appl. Crystallography 51, 1551 (2018.12.).

70. ˇ°Polarity and threading dislocation dependence of surface morphology of c-GaN films exposed to HCl vaporˇ±, Hyunkyu Lee, Dongsoo Jang, Donghoi Kim, Hwa Seob Kim, and Chinkyo Kim, J. Mater. Chem. C 6, 6264 (2018.06.).

69. ˇ°Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaNˇ±, Dongsoo Jang, Miyeon Jue, Donghoi Kim, Hwa Seob Kim, Hyunkyu Lee, and Chinkyo Kim, Scientific Reports 8, 4112 (2018.03.).

68. ˇ°Faceted growth of (-1103)-oriented GaN domains on an SiO2-patterned m-plane sapphire substrate using polarity inversionˇ±, Hansub Yoon, Miyeon Jue, Dongsoo Jang, and Chinkyo Kim, J. Appl. Crystallography 50, 30 (2017.02.).

67. ˇ°Catalytic decomposition of SiO2 by Fe and the effect of Cu on the behavior of released Si speciesˇ±, Dongsoo Jang, Miyeon Jue, Hansub Yoon, and Chinkyo Kim, Current Applied Physics 16, 93 (2016.01.).

66. ˇ°The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substratesˇ±, Miyeon Jue, Cheol-Woon Kim, Seoung-Hun Kang, Hansub Yoon, Dongsoo Jang, Young-Kyun Kwon, and Chinkyo Kim, Scientific Reports 5, 16236 (2015.11.).

65. ˇ°Spontaneous pattern transfer and selective growth of graphene on a Cu foilˇ±, Sanghwa Lee, Miyeon Jue, and Chinkyo Kim, Carbon 82, 238 (2015.02.).

64. ˇ°Mechanism of preferential nucleation of [1-10-3]-oriented GaN twins on an SiO2-patterned m-plane sapphire substrateˇ±, Hansub Yoon, Miyeon Jue, Hyemi Lee, Sanghwa Lee, and Chinkyo Kim, J. Appl. Cryst. 48, 195 (2015.02.).

63. ˇ°Self-regulated in-plane polarity of [1-100]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m-plane sapphire substrateˇ±, Hyemi Lee, Miyeon Jue, Hansub Yoon, Sanghwa Lee, and Chinkyo Kim, Appl. Phys. Lett. 104, 182105 (2014.05.).

62. ˇ°A surface flattening mechanism of a heteroepitaxial film consisting of faceted non-flat top twins:[1-10-3]-oriented GaN films grown on m-plane sapphire substratesˇ±, Miyeon Jue, Hansub Yoon, Hyemi Lee, Sanghwa Lee, and Chinkyo Kim, Appl. Phys. Lett. 104, 092110 (2014.03.).

61. ˇ°Microscopic analysis of thermally-driven formation of Cu-Si alloy nanoparticles in a Cu/Si templateˇ±, Wooyoung Lee, Miyeon Jue, Sanghwa Lee, and Chinkyo Kim, J. Kor. Phys. Soc. 63, 2128 (2013.12.).

60. ˇ°Spontaneous inversion of in-plane polarity of a-oriented GaN domains laterally overgrown on patterned r-plane sapphire substratesˇ±, Donggyu Shin, Sanghwa Lee, Miyeon Jue, Wooyoung Lee, Soyoung Oh, and Chinkyo Kim, J. Appl. Crystallography 46, 443 (2013.04.).

59. ˇ°Nitridation- and buffer-layer-free growth of [1-100]-oriented GaN domains on m-plane sapphire substrates by using hydride vapor phase epitaxyˇ±, Yeonwoo Seo, Sanghwa Lee, Miyeon Jue, Hansub Yoon, and Chinkyo Kim, Appl. Phys. Exp. 5, 121001 (2012.12.).

58. ˇ°X-ray diffuse scattering study of vacancy nanoclusters in homoepitaxial Ag(001) filmsˇ±, Chinkyo Kim, Edward Conrad, and Paul Miceli, Phys. Rev. B 86, 155446 (2012.10.).

57.ˇ°Regularly branched InN nanostructures:zinc-blende nanocore and polytypic transitionˇ±, Inhee Jung, Sanghwa Lee, Donggyu Shin, Hyunkyu Park, Mi Yeon Ju, and Chinkyo Kim, J. Appl. Crystallography 45, 503 (2012.06.).

56. ˇ°Amplified spontaneous emission of GaN nanorodsˇ±, Hyeong Seop Shim, Joo Hee Seo, Noh Soo Han, Seung Min Park, Yuri Sohn, Chinkyo Kim, and Jae Kyu Song, Bull. Korean Chem. Soc. 33, 1075 (2012.03.).

55. ˇ°Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coatingˇ±, Hyunkyu Park and Chinkyo Kim, Optics Letters 37, 611 (2012.02.).

54. ˇ°Analysis of morphological evolution of crystalline domains in nonequilibrium shape by using minimization of effective surface energyˇ±, Yeonwoo Seo, Sanghwa Lee, Mi Yeon Ju, Donggyu Shin, Hyunkyu Park, and Chinkyo Kim, Cryst. Growth & Design 11, 3930 (2011.09.).

53. ˇ°Nonequilibrium behavior of the Pb wetting layer on Si(111)7x7ˇ±, M. W. Gramlich, S. T. Hayden, Yiyao Chen, C. Kim, E. H. Conrad, M. C. Tringides, and P. F. Miceli, Phys. Rev. B 84, 075433 (2011.08.).

52. ˇ°1.54 Ąěm emission mechanism in Er-doped zinc oxide thin filmsˇ±, Y. R. Jang, K. H. Yoo, J. S. Ahn, C. Kim, and S. M. Park, Appl. Surf. Sci. 257, 2822 (2011.01.).

51. ˇ°Transformation of In grains to InN nanoshells with In2O3 as an intermediate state under N2-NH3 ambientˇ±, Inhee Jung and Chinkyo Kim, J. Kor. Phys. Soc. 58, 49 (2011.01.).

50. ˇ°Use of polytypes to control crystallographic orientation of GaNˇ±, Hyun-Jae Lee, Takafumi Yao, Chinkyo Kim, and Jiho Chang, Crystal Growth & Design 10, 5307 (2010.12.).

49. ˇ°Nanostructural analysis of GaN tripods and hexapods grown on c-plane sapphireˇ±, Sanghwa Lee, Yuri Sohn, Chinkyo Kim, Dong Ryeol Lee, and Hyun-Hwi Lee, J. Appl. Crystallography 43, 1300 (2010.12.).

48. ˇ°Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substratesˇ±, Yeonwoo Seo and Chinkyo Kim, Appl. Phys. Lett. 97, 101902 (2010.09.).

47. ˇ°Flow-modulation-assisted diffusion enhancement effect on the surface morphology of GaN filmsˇ±, Sanghwa Lee and Chinkyo Kim, J. Kor. Phys. Soc. 57, 282 (2010.08.).

46. ˇ°Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxyˇ±, Sanghwa Lee, Taegeon Oh, Boa Shin, Chinkyo Kim, Dong Ryeol Lee, and Hyun-Hwi Lee, J. Cryst. Growth 312, 2038 (2010.07.).

45. ˇ°Interface between quantum-size-effect Pb nanocrystals and the Si(111)7x7 substrate: an X-ray diffraction studyˇ±, M. W. Gramlich, S. T. Hayden, C. A. Jeffrey, C. Kim, R. Feng, E. H. Conrad, P. F. Miceli, Metallurgical and Materials Transactions A 41, 1159 (2010.05.).

44. ˇ°Novel approach to the fabrication of a strain- and crack-free GaN freestanding templates: Self-separation assisted by the voids spontaneously formed during the transition in the preferred orientationˇ±, Hyun-Jae Lee, T. Goto, K. Fujii, T. Yao, Chinkyo Kim, and Jiho Chang, J. Cryst. Growth 312, 198 (2010.01.).

43. ˇ°Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxyˇ±, Yuri Sohn and Chinkyo Kim, Appl. Surf. Sci. 256, 1078 (2009.11.).

42. ˇ°1.54 Ąěm emission mechanism in Er-doped silicon-rich silicon oxidesˇ±, Y. R. Jang, K. H. Yoo, J. S. Ahn, C. Kim, and S. M. Park, J. Appl. Phys. 106, 063521 (2009.09.).

41. ˇ°Effect of refined nitridation of sapphire substrates in hydride vapor phase epitaxy: definite correlation of structural characteristics between a low-temperature-grown buffer layer and a subsequent high-temperature-grown layer of GaNˇ±, Hyun-Jae Lee, Jun-Seok Ha, Hyo-Jong Lee, Seogwoo Lee, Chinkyo Kim, Soon-Ku Hong, Jiho Chang, Meoungwhan Cho, and T. Yao, J. Kor. Phys. Soc. 54, 2404 (2009.06.).

40. ˇ°Microstructural analysis of void formation due to NH4Cl layer for self-separation of GaN thick filmsˇ±, Hyun-Jae Lee, Jun-Seok Ha, Takafumi Yao, Chinkyo Kim, Soon-Ku Hong, Jiho Chang, Jae Wook Lee, and Jeong Yong Lee, Crystal Growth and Design 9, 2877 (2009.06.).

39. ˇ°A crystallographic investigation of GaN nanostructures by reciprocal-space-mapping in a grazing incidence geometryˇ±, Sanghwa Lee, Yuri Sohn, Chinkyo Kim, Dong Ryeol Lee, Hyun-Hwi Lee, Nanotechnology 20, 215703 (2009.05.).

38. ˇ°Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxyˇ±, Sanghwa Lee and Chinkyo Kim, J. Crystal Growth 311, 3025 (2009.05.).

37. ˇ°Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxyˇ±, Yuri Sohn and Chinkyo Kim, J. Crystal Growth 311, 2953 (2009.05.).

36. ˇ°Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [11-20] to [0001]ˇ±, Hyun-Jae Lee, Jun-Seok Ha, T. Goto, T. Yao, Chinkyo Kim, Soon-Ku Hong, and Jiho Chang, Appl. Phys. Lett. 94, 102103 (2009.03.).

35. ˇ°Migration-assisted formation of GaN nanodisks by hydride vapor phase epitaxyˇ±, Sanghwa Lee and Chinkyo Kim, J. Kor. Phys. Soc. 53, 1646(2008.09.).

34. ˇ°Branching characteristics of GaN multipods grown by using hydride vapor phase epitaxyˇ±, Yuri Sohn and Chinkyo Kim, J. Kor. Phys. Soc. 53, 1393 (2008.09.).

33. ˇ°Effect of the temperature gradient between a substrate and its ambient on the growth of vertically-aligned GaN nanorodsˇ±, Yuri Sohn, Sanghwa Lee, Hyeokmin Choe, and Chinkyo Kim, J. Kor. Phys. Soc. 53, 908 (2008.8.).

32. ˇ°Long-range ordering of GaN nano-grains grown on vicinal sapphire substratesˇ±, Hyeokmin Choe, Sanghwa Lee, Boa Shin, and Chinkyo Kim, J. Crystal Growth 310, 3278 (2008.7.).

31. ˇ°Control of nucleation characteristics of GaN nanograins grown by hydride vapor phase epitaxyˇ±, Boa Shin, Sanghwa Lee, Hyeokmin Choe, Taegeon Oh, Jai Weon Jean, Yuri Sohn, and Chinkyo Kim, J. Kor. Phys. Soc. 51, S212 (2007.12.).

30. ˇ°Nano-clustering of vacancies in thin metal films revealed by x-ray diffuse scatteringˇ±, Chinkyo Kim, Rui Feng, Edward H. Conrad, and Paul F. Miceli, Appl. Phys. Lett. 91, 093131 (2007.8.).

29. ˇ°Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layersˇ±, Sanghwa Lee, Hyeokmin Choe, Taegeon Oh, Jai Weon Jean, Boa Shin, Yuri Sohn, Chinkyo Kim, Jaewan Choi, Yong-Tae Moon, Joeng Soo Lee, Appl. Phys. Lett. 90, 151905 (2007.4.).

28. ˇ°Effect of NH3 pretreatment on the surface morphologies of GaN films grown on miscut sapphire substrates by using hydride vapor phase epitaxyˇ±, Sanghwa Lee, Taegeon Oh, Boa Shin, Jai Weon Jean, Hyeokmin Choe, and Chinkyo Kim, J. Kor. Phys. Soc. 50, 785 (2007.3.).

27. ˇ°The growth of Pb nanocrystals on Si(111)7x7: Quantum size effectsˇ±, C. A. Jeffrey, R. Feng, E. H. Conrad, P. F. Miceli, C. Kim, M. Hupalo, M. C. Tringides, and P. J. Ryan, J. Superlattices and microstructures 41, 168 (2007.03.).

26. ˇ°Formation and phtoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorodsˇ±, Chinkyo Kim, Won Il Park, Gyu-Chul Yi, and Miyoung Kim, Appl. Phys. Lett. 89, 113106 (2006.9.).

25. ˇ°Structural investigation of GaN nanograins nucleated on sapphire substrateˇ±, Chinkyo Kim, Seogwoo Lee, Hyunjae Lee, and Meoungwhan Cho, J. Kor. Phys. Soc. 48, 1321 (2006.6.).

24. ˇ°Influence of quantum size effects on island coarseningˇ±, C. A. Jeffrey, E. H. Conrad, R. Feng, M. Hupalo, C. Kim, P. J. Ryan, P. F. Miceli, and M. C. Tringides, Phys. Rev. Lett. 96, 106105 (2006.3.).

23. ˇ°Whispering-gallery-modelike-enhanced emission from ZnO nanodiskˇ±, Chinkyo Kim, Yong-Jin Kim, Eue-Soon Jang, Gyu-Chul Yi, and Hyun Ha Kim, Appl. Phys. Lett. 88, 093104 (2006.2.).

22. ˇ°The evolution of the structure of quantum size effect Pb nanocrystals on Si(111)7x7ˇ±, R. Feng, E. H. Conrad, C. Kim, P. F. Miceli and M. C. Tringides, Physica B:Condensed matter, 357, 175 (2005.2.).

21. ˇ°Wetting-layer transformation for Pb nanocrystals grown on Si(111)ˇ±, R. Feng, E. H. Conrad, M. C. Tringides, C. Kim, and P. Miceli, Appl. Phys. Lett. 85, 3866 (2004.10.).

20. ˇ°Characteristics of a GaN thick film on Si(111) grown by hydride vapor phase epitaxy using an AlN buffer layerˇ±, H. J. Lee, S. W. Lee, C. Kim, J. O. Seo, M. W. Cho, S. J. Leem, S. U. Hong, K. -H. Shim, J. Y. Kang, J. Kor. Phys. Soc. 42, S349 (2003.2.).

19. ˇ°Heteroepitaxial growth of MgO thin films on Al2O3 (0001) by metalorganic chemical vapor depositionˇ±, Won Il Park, Dong-Hyuk Kim, Gyu Chul Yi, Chinkyo Kim, Jpn. J. Appl. Phys. 41, No. 11B, 6919 (2002.11.).

18. ˇ°Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN filmsˇ±, Chinkyo Kim, Sungwoo Kim, Yoonho Choi, and Shi-Jong Leem, J. Appl. Phys. 92, 6343 (2002.11.).

17. ˇ°Zn-triggered critical behavior of formation of highly coherent domains in a Mg1-xZnxO thin film on Al2O3ˇ±, Chinkyo Kim, Shi-Jong Leem, Ian K. Robinson, W. I. Park, D. H. Kim, and G. ?C. Yi, Phys. Rev. B 66, 113404 (2002.9.).

16. ˇ°Effect of rapid thermal annealing on GaN damages induced by electron cyclotron resonance reactive ion etchingˇ±, J. H. Yi, C. Kim, M. H. Kim, M. Yang, J. Jeon, S. Khym, M. Cho, S. Lee, Y. Choi and S.-J. Leem, J. Kor. Phys. Soc. 39, S364 (2001.12.).

15. ˇ°Temperature-driven crystalline ordering and Ohmic contact formation of PdAu layer on p-type GaNˇ±, Chinkyo Kim, Junho Jang, Johngeon Shin, Jae-Wan Choi, Jung-Hoon Seo, Wook Kim, Joongseo Park, Ju Ok Seo, Shi-Jong Leem, B. H. Seung, K. -B. Lee, and Y. J. Park, Phys. Rev. B 64. 113302 (2001.9.).

14. ˇ°A selective growth of III-nitride by MOCVD for a buried-ridge type structureˇ±, Min Yang, Meoungwhan Cho, Chinkyo Kim, Jaehyung Yi, Jina Jeon, Sungwon Khym, Minhong Kim, Yoonho Choi, Shi-Jong Leem, and Yong-Hee Lee, J. Crystal Growth, 226, 73 (2001.6.).

13. ˇ°Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN(0001) by rf-magnetron sputterˇ±, K. H. Shim, M. C. Paek, B. T. Lee, C. Kim, and J. Y. Kang, Applied Physics A, 72, 471 (2001.4.).

12. ˇ°Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN filmˇ±, Chinkyo Kim, Jaehyung Yi, Min Yang, Minhong Kim, Jina Jeon, Sungwon Khym, Meoungwhan Cho, Yoonho Choi, Shi-Jong Leem, and Seon Tai Kim, Appl. Phys. Lett. 77, 4319 (2000.12.).

11. ˇ°Cathodoluminescence characteristics of large-scale In-rich InGaN grains and effect of low-energy electron-beam irradiationˇ±, Chinkyo Kim, Min Yang, Jaehyung Yi, Minhong Kim, Heesuk Song, Jina Jeon, Yoonho Choi, Tae-Kyung Yoo, and Shi-Jong Leem, J. Kor. Phys. Soc. 37, 846 (2000.11.).

10. ˇ°Formation and characteristics of inversion domain in GaN grown by hydride vapor phase epitaxyˇ±, Chinkyo Kim, Min Yang, Wonsang Lee, Jaehyung Yi, Sungwoo Kim, Yoonho Choi, Tae-Kyung Yoo, and Seon Tai Kim, J. Crystal Growth, 213, 235 (2000.6.).

9. ˇ°Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxyˇ±, Chinkyo Kim, Jaehyung Yi, Sungwoo Kim, Min Hong Kim, Min Yang, Yoonho Choi, Tae-Kyung Yoo, and Seon Tai Kim, J. Crystal Growth, 208, 804 (2000.1.).

8. ˇ°Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor depositionˇ±, Chinkyo Kim, Sungwoo Kim, Jaehyung Yi, Yoonho Choi, Tae-Kyung Yoo, and Chang-Hee Hong, J. Kor. Phys. Soc. 34, S370 (1999.5.).

7. ˇ°Buffer layer strain transfer in AlN/GaN near critical thicknessˇ±, Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyu-Hwan Shim, and Kyekyoon Kim, J. Appl. Phys. 85, 4040 (1999.4.).

6. ˇ°Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiationˇ±, Chinkyo Kim, I. K. Robinson, T. Spila, and J. E. Greene, J. Appl. Phys. 83, 7608 (1998.6.).

5. ˇ°Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxyˇ±, K. -H. Shim, J. M. Myoung, O. Gluschenkov, K. Kim, C. Kim and I. K. Robinson, Jpn. J. Appl. Phys. 37, L313 (1998.3.).

4. ˇ°Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxyˇ±, J. M. Myoung, K. H. Shim, O. Gluschenkov, C. Kim, K. Kim, S. Kim and S. G. Bishop, J. Cryst. Growth. 182, 241 (1997.12.).

3. ˇ°Refined structure of Sb/Si(111)ˇ±, Chinkyo Kim, D. A. Walko and I. K. Robinson, Surf. Sci. 388, 242 (1997.10.).

2. ˇ°Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxyˇ±, J. M. Myoung, K. H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D. A. Turnbull and S. G. Bishop, Appl. Phys. Lett. 69, 2722 (1996.10.).

1. ˇ°Critical thickness of GaN thin films on sapphire(0001)ˇ±, Chinkyo Kim, I. K. Robinson, Jaemin Myoung, Kyu-Hwan Shim, Myung-Cheol Yoo and Kyekyoon Kim, Appl. Phys. Lett. 69, 2358 (1996.10.).